Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI5448DU-T1-GE3

SI5448DU-T1-GE3

For Reference Only

Part Number SI5448DU-T1-GE3
PNEDA Part # SI5448DU-T1-GE3
Description MOSFET N-CH 40V 25A CHIPFET
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 24,288
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI5448DU-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI5448DU-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI5448DU-T1-GE3, SI5448DU-T1-GE3 Datasheet (Total Pages: 7, Size: 159.69 KB)
PDFSI5448DU-T1-GE3 Datasheet Cover
SI5448DU-T1-GE3 Datasheet Page 2 SI5448DU-T1-GE3 Datasheet Page 3 SI5448DU-T1-GE3 Datasheet Page 4 SI5448DU-T1-GE3 Datasheet Page 5 SI5448DU-T1-GE3 Datasheet Page 6 SI5448DU-T1-GE3 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI5448DU-T1-GE3 Datasheet
  • where to find SI5448DU-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SI5448DU-T1-GE3
  • SI5448DU-T1-GE3 PDF Datasheet
  • SI5448DU-T1-GE3 Stock

  • SI5448DU-T1-GE3 Pinout
  • Datasheet SI5448DU-T1-GE3
  • SI5448DU-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SI5448DU-T1-GE3 Price
  • SI5448DU-T1-GE3 Distributor

SI5448DU-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 4.5V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds1765pF @ 20V
FET Feature-
Power Dissipation (Max)31W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® ChipFet Single
Package / CasePowerPAK® ChipFET™ Single

The Products You May Be Interested In

SI3445DV-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

8V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

42mOhm @ 5.6A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6

TK20S06K3L(T6L1,NQ

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

20A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

29mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

780pF @ 10V

FET Feature

-

Power Dissipation (Max)

38W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK+

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

NTB45N06T4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

45A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

26mOhm @ 22.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1725pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.4W (Ta), 125W (Tj)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STFI6N65K3

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

5.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.3Ohm @ 2.7A, 10V

Vgs(th) (Max) @ Id

4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

33nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

880pF @ 50V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAKFP (TO-281)

Package / Case

TO-262-3 Full Pack, I²Pak

STS8N6LF6AG

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, STripFET™ F6

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

24mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1340pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.2W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

0ZCJ0025AF2E

0ZCJ0025AF2E

Bel Fuse

PTC RESET FUSE 24V 250MA 1206

LTC4365ITS8#TRMPBF

LTC4365ITS8#TRMPBF

Linear Technology/Analog Devices

IC OVERVOLTAGE PROT TSOT23-8

AT49F040-12TI

AT49F040-12TI

Microchip Technology

IC FLASH 4M PARALLEL 32TSOP

MA2SD2500L

MA2SD2500L

Panasonic Electronic Components

DIODE SCHOTTKY 15V 200MA SSMINI2

ADP122AUJZ-3.3-R7

ADP122AUJZ-3.3-R7

Analog Devices

IC REG LINEAR 3.3V 300MA TSOT5

GD25Q80CSIG

GD25Q80CSIG

GigaDevice Semiconductor (HK) Limited

NOR FLASH

74HC123D

74HC123D

Toshiba Semiconductor and Storage

IC MULTIVIBRATR DUAL MONO 16SOIC

LSM9DS1TR

LSM9DS1TR

STMicroelectronics

IMU ACCEL/GYRO/MAG I2C/SPI 24LGA

ADG849YKSZ-REEL7

ADG849YKSZ-REEL7

Analog Devices

IC SWITCH SPDT SC70-6

BR24T16F-WE2

BR24T16F-WE2

Rohm Semiconductor

IC EEPROM 16K I2C 400KHZ 8SOP

RCLAMP3654P.TCT

RCLAMP3654P.TCT

Semtech

TVS DIODE 5.5V 30V SLP1616P6

WSL0603R1000FEA18

WSL0603R1000FEA18

Vishay Dale

RES 0.1 OHM 1% 1/5W 0603