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SI5441DC-T1-E3

SI5441DC-T1-E3

For Reference Only

Part Number SI5441DC-T1-E3
PNEDA Part # SI5441DC-T1-E3
Description MOSFET P-CH 20V 3.9A 1206-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,546
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI5441DC-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI5441DC-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI5441DC-T1-E3, SI5441DC-T1-E3 Datasheet (Total Pages: 5, Size: 114.6 KB)
PDFSI5441DC-T1-GE3 Datasheet Cover
SI5441DC-T1-GE3 Datasheet Page 2 SI5441DC-T1-GE3 Datasheet Page 3 SI5441DC-T1-GE3 Datasheet Page 4 SI5441DC-T1-GE3 Datasheet Page 5

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SI5441DC-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs55mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.3W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package1206-8 ChipFET™
Package / Case8-SMD, Flat Lead

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