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SI4942DY-T1-GE3

SI4942DY-T1-GE3

For Reference Only

Part Number SI4942DY-T1-GE3
PNEDA Part # SI4942DY-T1-GE3
Description MOSFET 2N-CH 40V 5.3A 8-SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,660
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4942DY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4942DY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI4942DY-T1-GE3, SI4942DY-T1-GE3 Datasheet (Total Pages: 6, Size: 100.53 KB)
PDFSI4942DY-T1-E3 Datasheet Cover
SI4942DY-T1-E3 Datasheet Page 2 SI4942DY-T1-E3 Datasheet Page 3 SI4942DY-T1-E3 Datasheet Page 4 SI4942DY-T1-E3 Datasheet Page 5 SI4942DY-T1-E3 Datasheet Page 6

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SI4942DY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C5.3A
Rds On (Max) @ Id, Vgs21mOhm @ 7.4A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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FET Feature

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Operating Temperature

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FET Type

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FET Feature

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Power - Max

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Operating Temperature

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Package / Case

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Supplier Device Package

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Panasonic Electronic Components

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Series

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FET Type

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FET Feature

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

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Supplier Device Package

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Manufacturer

Diodes Incorporated

Series

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FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

3.6A, 2.6A

Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

1V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

20.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1063pF @ 30V

Power - Max

2.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

DMC4040SSD-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

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FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

6.8A

Rds On (Max) @ Id, Vgs

25mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

37.6nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1790pF @ 20V

Power - Max

1.8W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

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