SI4910DY-T1-GE3

For Reference Only
Part Number | SI4910DY-T1-GE3 |
PNEDA Part # | SI4910DY-T1-GE3 |
Description | MOSFET 2N-CH 40V 7.6A 8-SOIC |
Manufacturer | Vishay Siliconix |
Unit Price | Request a Quote |
In Stock | 6,282 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SI4910DY-T1-GE3 Resources
Brand | Vishay Siliconix |
ECAD Module |
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Mfr. Part Number | SI4910DY-T1-GE3 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
Datasheet |
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SI4910DY-T1-GE3 Specifications
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 7.6A |
Rds On (Max) @ Id, Vgs | 27mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 855pF @ 20V |
Power - Max | 3.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
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