SI4900DY-T1-E3
For Reference Only
Part Number | SI4900DY-T1-E3 |
PNEDA Part # | SI4900DY-T1-E3 |
Description | MOSFET 2N-CH 60V 5.3A 8-SOIC |
Manufacturer | Vishay Siliconix |
Unit Price | Request a Quote |
In Stock | 99,846 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
SI4900DY-T1-E3 Resources
Brand | Vishay Siliconix |
ECAD Module | |
Mfr. Part Number | SI4900DY-T1-E3 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SI4900DY-T1-E3 Datasheet
- where to find SI4900DY-T1-E3
- Vishay Siliconix
- Vishay Siliconix SI4900DY-T1-E3
- SI4900DY-T1-E3 PDF Datasheet
- SI4900DY-T1-E3 Stock
- SI4900DY-T1-E3 Pinout
- Datasheet SI4900DY-T1-E3
- SI4900DY-T1-E3 Supplier
- Vishay Siliconix Distributor
- SI4900DY-T1-E3 Price
- SI4900DY-T1-E3 Distributor
SI4900DY-T1-E3 Specifications
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 5.3A |
Rds On (Max) @ Id, Vgs | 58mOhm @ 4.3A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 665pF @ 15V |
Power - Max | 3.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
The Products You May Be Interested In
Microsemi Manufacturer Microsemi Corporation Series - FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 149A Rds On (Max) @ Id, Vgs 25mOhm @ 74.5A, 10V Vgs(th) (Max) @ Id 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs 1200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 29600pF @ 25V Power - Max 1250W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case SP4 Supplier Device Package SP4 |
Alpha & Omega Semiconductor Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs 10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V, 17.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 485pF @ 15V, 807pF @ 15V Power - Max 2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-WDFN Exposed Pad Supplier Device Package 8-DFN-EP (3x3) |
Texas Instruments Manufacturer Series - FET Type - FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.5A Rds On (Max) @ Id, Vgs 300mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 98pF @ 14V Power - Max 2.86W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 24-SOIC (0.295", 7.50mm Width) Supplier Device Package 24-SOIC |
Alpha & Omega Semiconductor Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type 2 N-Channel (Dual) Common Drain FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs 16mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 1390pF @ 10V Power - Max 1.5W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package 8-TSSOP |
Infineon Technologies Manufacturer Infineon Technologies Series HEXFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 5.2A Rds On (Max) @ Id, Vgs 58mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 913pF @ 15V Power - Max 2.4W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |