SI4890BDY-T1-E3
For Reference Only
| Part Number | SI4890BDY-T1-E3 |
| PNEDA Part # | SI4890BDY-T1-E3 |
| Description | MOSFET N-CH 30V 16A 8-SOIC |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 8,658 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 4 - Apr 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SI4890BDY-T1-E3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
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| Mfr. Part Number | SI4890BDY-T1-E3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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SI4890BDY-T1-E3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1535pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 5.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 13A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.7mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17.2nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 15V FET Feature - Power Dissipation (Max) 1.39W (Ta) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300V Current - Continuous Drain (Id) @ 25°C 9.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 450mOhm @ 5.6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 920pF @ 25V FET Feature - Power Dissipation (Max) 96W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
