SI4816DY-T1-E3
For Reference Only
| Part Number | SI4816DY-T1-E3 |
| PNEDA Part # | SI4816DY-T1-E3 |
| Description | MOSFET 2N-CH 30V 5.3A 8-SOIC |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 4,140 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SI4816DY-T1-E3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SI4816DY-T1-E3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SI4816DY-T1-E3 Datasheet
- where to find SI4816DY-T1-E3
- Vishay Siliconix
- Vishay Siliconix SI4816DY-T1-E3
- SI4816DY-T1-E3 PDF Datasheet
- SI4816DY-T1-E3 Stock
- SI4816DY-T1-E3 Pinout
- Datasheet SI4816DY-T1-E3
- SI4816DY-T1-E3 Supplier
- Vishay Siliconix Distributor
- SI4816DY-T1-E3 Price
- SI4816DY-T1-E3 Distributor
SI4816DY-T1-E3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | LITTLE FOOT® |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A, 7.7A |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 6.3A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1W, 1.25W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.5A, 6.3A Rds On (Max) @ Id, Vgs 17.4mOhm @ 9A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 605pF @ 15V Power - Max 800mW, 810mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerWDFN Supplier Device Package 8-WDFN (3x3) |
Manufacturer ON Semiconductor Series * FET Type - FET Feature - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Microsemi Corporation Series CoolMOS™ FET Type 2 N-Channel (Half Bridge) FET Feature Standard Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 36A Rds On (Max) @ Id, Vgs 83mOhm @ 18A, 10V Vgs(th) (Max) @ Id 5V @ 3mA Gate Charge (Qg) (Max) @ Vgs 255nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 7290pF @ 25V Power - Max 250W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case Module Supplier Device Package Module |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 34A (Tc) Rds On (Max) @ Id, Vgs 11.71mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 20V Power - Max 23W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® 1212-8 Dual Supplier Device Package PowerPAK® 1212-8 Dual |
Manufacturer ON Semiconductor Series * FET Type - FET Feature - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
