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SI4808DY-T1-E3

SI4808DY-T1-E3

For Reference Only

Part Number SI4808DY-T1-E3
PNEDA Part # SI4808DY-T1-E3
Description MOSFET 2N-CH 30V 5.7A 8SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,646
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4808DY-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4808DY-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI4808DY-T1-E3, SI4808DY-T1-E3 Datasheet (Total Pages: 6, Size: 111.68 KB)
PDFSI4808DY-T1-GE3 Datasheet Cover
SI4808DY-T1-GE3 Datasheet Page 2 SI4808DY-T1-GE3 Datasheet Page 3 SI4808DY-T1-GE3 Datasheet Page 4 SI4808DY-T1-GE3 Datasheet Page 5 SI4808DY-T1-GE3 Datasheet Page 6

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SI4808DY-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesLITTLE FOOT®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C5.7A
Rds On (Max) @ Id, Vgs22mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id800mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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