Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI4561DY-T1-GE3

SI4561DY-T1-GE3

For Reference Only

Part Number SI4561DY-T1-GE3
PNEDA Part # SI4561DY-T1-GE3
Description MOSFET N/P-CH 40V 6.8A 8-SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,194
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4561DY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4561DY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI4561DY-T1-GE3, SI4561DY-T1-GE3 Datasheet (Total Pages: 12, Size: 137.51 KB)
PDFSI4561DY-T1-E3 Datasheet Cover
SI4561DY-T1-E3 Datasheet Page 2 SI4561DY-T1-E3 Datasheet Page 3 SI4561DY-T1-E3 Datasheet Page 4 SI4561DY-T1-E3 Datasheet Page 5 SI4561DY-T1-E3 Datasheet Page 6 SI4561DY-T1-E3 Datasheet Page 7 SI4561DY-T1-E3 Datasheet Page 8 SI4561DY-T1-E3 Datasheet Page 9 SI4561DY-T1-E3 Datasheet Page 10 SI4561DY-T1-E3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI4561DY-T1-GE3 Datasheet
  • where to find SI4561DY-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SI4561DY-T1-GE3
  • SI4561DY-T1-GE3 PDF Datasheet
  • SI4561DY-T1-GE3 Stock

  • SI4561DY-T1-GE3 Pinout
  • Datasheet SI4561DY-T1-GE3
  • SI4561DY-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SI4561DY-T1-GE3 Price
  • SI4561DY-T1-GE3 Distributor

SI4561DY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C6.8A, 7.2A
Rds On (Max) @ Id, Vgs35.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds640pF @ 20V
Power - Max3W, 3.3W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

The Products You May Be Interested In

EFC6602R-A-TR

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

2 N-Channel (Dual) Common Drain

FET Feature

Logic Level Gate, 2.5V Drive

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

55nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

2W

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-XFBGA, FCBGA

Supplier Device Package

EFCP2718-6CE-020

AON6816

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

2 N-Channel (Dual) Common Drain

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

17A

Rds On (Max) @ Id, Vgs

6.2mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1540pF @ 15V

Power - Max

2.8W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerSMD, Flat Leads

Supplier Device Package

8-DFN-EP (5x6)

FDS4885C

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N and P-Channel

FET Feature

Standard

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

7.5A, 6A

Rds On (Max) @ Id, Vgs

22mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

900pF @ 20V

Power - Max

900mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC

APTMC120AM08CD3AG

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

2 N-Channel (Half Bridge)

FET Feature

Silicon Carbide (SiC)

Drain to Source Voltage (Vdss)

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C

250A (Tc)

Rds On (Max) @ Id, Vgs

10mOhm @ 200A, 20V

Vgs(th) (Max) @ Id

2.2V @ 10mA (Typ)

Gate Charge (Qg) (Max) @ Vgs

490nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds

9500pF @ 1000V

Power - Max

1100W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

D-3 Module

Supplier Device Package

D3

SI4544DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel, Common Drain

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

-

Rds On (Max) @ Id, Vgs

35mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

2.4W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

Recently Sold

M74HC42B1R

M74HC42B1R

STMicroelectronics

IC DECODER BCD TO DECIMAL 16-DIP

MAX809SEUR+T

MAX809SEUR+T

Maxim Integrated

IC MPU/RESET CIRC SOT23-3

KSZ8081RNBIA-TR

KSZ8081RNBIA-TR

Microchip Technology

IC TRANSCEIVER FULL 1/1 32QFN

VLMRGB343-ST-UV-RS

VLMRGB343-ST-UV-RS

Vishay Semiconductor Opto Division

LED RGB 4PLCC SMD

PLA10AN3630R3D2B

PLA10AN3630R3D2B

Murata

COMMON MODE CHOKE 300MA 2LN TH

AT25256B-SSHL-T

AT25256B-SSHL-T

Microchip Technology

IC EEPROM 256K SPI 20MHZ 8SOIC

M4A5-32/32-10JNC

M4A5-32/32-10JNC

Lattice Semiconductor Corporation

IC CPLD 32MC 10NS 44PLCC

MX25L12835FM2I-10G

MX25L12835FM2I-10G

Macronix

IC FLASH 128M SPI 104MHZ 8SOP

ADN4662BRZ

ADN4662BRZ

Analog Devices

IC RECEIVER 0/1 8SOIC

CDSOT23-T24CAN

CDSOT23-T24CAN

Bourns

TVS DIODE 24V 40V SOT23

MAX1111CPE+

MAX1111CPE+

Maxim Integrated

IC ADC 8BIT SAR 16DIP

EPM1270F256C5N

EPM1270F256C5N

Intel

IC CPLD 980MC 6.2NS 256FBGA