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SI4539ADY-T1-GE3

SI4539ADY-T1-GE3

For Reference Only

Part Number SI4539ADY-T1-GE3
PNEDA Part # SI4539ADY-T1-GE3
Description MOSFET N/P-CH 30V 4.4A 8-SOIC
Manufacturer Vishay Siliconix
Unit Price
1 ---------- $1,849.1811
50 ---------- $1,762.5007
100 ---------- $1,675.8203
200 ---------- $1,589.1400
400 ---------- $1,516.9063
500 ---------- $1,444.6727
In Stock 34,649
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4539ADY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4539ADY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI4539ADY-T1-GE3, SI4539ADY-T1-GE3 Datasheet (Total Pages: 8, Size: 129.07 KB)
PDFSI4539ADY-T1-GE3 Datasheet Cover
SI4539ADY-T1-GE3 Datasheet Page 2 SI4539ADY-T1-GE3 Datasheet Page 3 SI4539ADY-T1-GE3 Datasheet Page 4 SI4539ADY-T1-GE3 Datasheet Page 5 SI4539ADY-T1-GE3 Datasheet Page 6 SI4539ADY-T1-GE3 Datasheet Page 7 SI4539ADY-T1-GE3 Datasheet Page 8

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SI4539ADY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4.4A, 3.7A
Rds On (Max) @ Id, Vgs36mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

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