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SI4532CDY-T1-GE3

SI4532CDY-T1-GE3

For Reference Only

Part Number SI4532CDY-T1-GE3
PNEDA Part # SI4532CDY-T1-GE3
Description MOSFET N/P-CH 30V 6A 8-SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,898
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4532CDY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4532CDY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI4532CDY-T1-GE3, SI4532CDY-T1-GE3 Datasheet (Total Pages: 14, Size: 224.04 KB)
PDFSI4532CDY-T1-GE3 Datasheet Cover
SI4532CDY-T1-GE3 Datasheet Page 2 SI4532CDY-T1-GE3 Datasheet Page 3 SI4532CDY-T1-GE3 Datasheet Page 4 SI4532CDY-T1-GE3 Datasheet Page 5 SI4532CDY-T1-GE3 Datasheet Page 6 SI4532CDY-T1-GE3 Datasheet Page 7 SI4532CDY-T1-GE3 Datasheet Page 8 SI4532CDY-T1-GE3 Datasheet Page 9 SI4532CDY-T1-GE3 Datasheet Page 10 SI4532CDY-T1-GE3 Datasheet Page 11

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SI4532CDY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN and P-Channel
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6A, 4.3A
Rds On (Max) @ Id, Vgs47mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds305pF @ 15V
Power - Max2.78W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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