Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI4465ADY-T1-E3

SI4465ADY-T1-E3

For Reference Only

Part Number SI4465ADY-T1-E3
PNEDA Part # SI4465ADY-T1-E3
Description MOSFET P-CH 8V 8SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 23,562
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4465ADY-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4465ADY-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI4465ADY-T1-E3, SI4465ADY-T1-E3 Datasheet (Total Pages: 9, Size: 688.61 KB)
PDFSI4465ADY-T1-GE3 Datasheet Cover
SI4465ADY-T1-GE3 Datasheet Page 2 SI4465ADY-T1-GE3 Datasheet Page 3 SI4465ADY-T1-GE3 Datasheet Page 4 SI4465ADY-T1-GE3 Datasheet Page 5 SI4465ADY-T1-GE3 Datasheet Page 6 SI4465ADY-T1-GE3 Datasheet Page 7 SI4465ADY-T1-GE3 Datasheet Page 8 SI4465ADY-T1-GE3 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI4465ADY-T1-E3 Datasheet
  • where to find SI4465ADY-T1-E3
  • Vishay Siliconix

  • Vishay Siliconix SI4465ADY-T1-E3
  • SI4465ADY-T1-E3 PDF Datasheet
  • SI4465ADY-T1-E3 Stock

  • SI4465ADY-T1-E3 Pinout
  • Datasheet SI4465ADY-T1-E3
  • SI4465ADY-T1-E3 Supplier

  • Vishay Siliconix Distributor
  • SI4465ADY-T1-E3 Price
  • SI4465ADY-T1-E3 Distributor

SI4465ADY-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs9mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs85nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)3W (Ta), 6.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

FDB33N25TM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UniFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

33A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

94mOhm @ 16.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

48nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2135pF @ 25V

FET Feature

-

Power Dissipation (Max)

235W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRF8301MTRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

34A (Ta), 192A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.5mOhm @ 32A, 10V

Vgs(th) (Max) @ Id

2.35V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

77nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6140pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta), 89W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ MT

Package / Case

DirectFET™ Isometric MT

SSM6J207FE,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSII

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

251mOhm @ 650mA, 10V

Vgs(th) (Max) @ Id

2.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

137pF @ 15V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

ES6 (1.6x1.6)

Package / Case

SOT-563, SOT-666

IRFR9214TRR

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

2.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3Ohm @ 1.7A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

220pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FDMC7660DC

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Dual Cool™, PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

30A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.2mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

76nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5170pF @ 15V

FET Feature

-

Power Dissipation (Max)

3W (Ta), 78W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Dual Cool ™ 33

Package / Case

8-PowerTDFN

Recently Sold

AT25M01-SSHM-T

AT25M01-SSHM-T

Microchip Technology

IC EEPROM 1M SPI 20MHZ 8SOIC

17-21SURC/S530-A3/TR8

17-21SURC/S530-A3/TR8

Everlight Electronics Co Ltd

LED RED CLEAR SMD

MBRD1035CTLG

MBRD1035CTLG

ON Semiconductor

DIODE ARRAY SCHOTTKY 35V 5A DPAK

CY62187EV30LL-55BAXI

CY62187EV30LL-55BAXI

Cypress Semiconductor

IC SRAM 64M PARALLEL 48FBGA

MCP6002-E/SN

MCP6002-E/SN

Microchip Technology

IC OPAMP GP 2 CIRCUIT 8SOIC

SC18IS600IBS,157

SC18IS600IBS,157

NXP

IC I2C BUS INTERFACE 24-HVQFN

IRF9321TRPBF

IRF9321TRPBF

Infineon Technologies

MOSFET P-CH 30V 15A 8-SOIC

W25Q256JVCIQ

W25Q256JVCIQ

Winbond Electronics

IC FLASH 256M SPI 24TFBGA

AUIRF2804S

AUIRF2804S

Infineon Technologies

MOSFET N-CH 40V 195A D2PAK

LT3437IFE#PBF

LT3437IFE#PBF

Linear Technology/Analog Devices

IC REG BUCK ADJ 500MA 16TSSOP

LTC1760IFW#PBF

LTC1760IFW#PBF

Linear Technology/Analog Devices

IC MANAGER BATTERY DUAL 48TSSOP

AD7305BRZ

AD7305BRZ

Analog Devices

IC DAC 8BIT V-OUT 20SOIC