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SI4431CDY-T1-GE3

SI4431CDY-T1-GE3

For Reference Only

Part Number SI4431CDY-T1-GE3
PNEDA Part # SI4431CDY-T1-GE3
Description MOSFET P-CH 30V 9A 8-SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 66,558
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4431CDY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4431CDY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI4431CDY-T1-GE3, SI4431CDY-T1-GE3 Datasheet (Total Pages: 9, Size: 204.43 KB)
PDFSI4431CDY-T1-E3 Datasheet Cover
SI4431CDY-T1-E3 Datasheet Page 2 SI4431CDY-T1-E3 Datasheet Page 3 SI4431CDY-T1-E3 Datasheet Page 4 SI4431CDY-T1-E3 Datasheet Page 5 SI4431CDY-T1-E3 Datasheet Page 6 SI4431CDY-T1-E3 Datasheet Page 7 SI4431CDY-T1-E3 Datasheet Page 8 SI4431CDY-T1-E3 Datasheet Page 9

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SI4431CDY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs32mOhm @ 7A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1006pF @ 15V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 4.2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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