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SI4403CDY-T1-GE3

SI4403CDY-T1-GE3

For Reference Only

Part Number SI4403CDY-T1-GE3
PNEDA Part # SI4403CDY-T1-GE3
Description MOSFET P-CH 20V 13.4A 8SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 21,216
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4403CDY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4403CDY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI4403CDY-T1-GE3, SI4403CDY-T1-GE3 Datasheet (Total Pages: 9, Size: 167.86 KB)
PDFSI4403CDY-T1-GE3 Datasheet Cover
SI4403CDY-T1-GE3 Datasheet Page 2 SI4403CDY-T1-GE3 Datasheet Page 3 SI4403CDY-T1-GE3 Datasheet Page 4 SI4403CDY-T1-GE3 Datasheet Page 5 SI4403CDY-T1-GE3 Datasheet Page 6 SI4403CDY-T1-GE3 Datasheet Page 7 SI4403CDY-T1-GE3 Datasheet Page 8 SI4403CDY-T1-GE3 Datasheet Page 9

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SI4403CDY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C13.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs15.5mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs90nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds2380pF @ 10V
FET Feature-
Power Dissipation (Max)5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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