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SI4310BDY-T1-E3

SI4310BDY-T1-E3

For Reference Only

Part Number SI4310BDY-T1-E3
PNEDA Part # SI4310BDY-T1-E3
Description MOSFET 2N-CH 30V 7.5A 14SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,508
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4310BDY-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4310BDY-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI4310BDY-T1-E3, SI4310BDY-T1-E3 Datasheet (Total Pages: 10, Size: 149.05 KB)
PDFSI4310BDY-T1-E3 Datasheet Cover
SI4310BDY-T1-E3 Datasheet Page 2 SI4310BDY-T1-E3 Datasheet Page 3 SI4310BDY-T1-E3 Datasheet Page 4 SI4310BDY-T1-E3 Datasheet Page 5 SI4310BDY-T1-E3 Datasheet Page 6 SI4310BDY-T1-E3 Datasheet Page 7 SI4310BDY-T1-E3 Datasheet Page 8 SI4310BDY-T1-E3 Datasheet Page 9 SI4310BDY-T1-E3 Datasheet Page 10

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SI4310BDY-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C7.5A, 9.8A
Rds On (Max) @ Id, Vgs11mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds2370pF @ 15V
Power - Max1.14W, 1.47W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case14-SOIC (0.154", 3.90mm Width)
Supplier Device Package14-SOIC

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