Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI4276DY-T1-GE3

SI4276DY-T1-GE3

For Reference Only

Part Number SI4276DY-T1-GE3
PNEDA Part # SI4276DY-T1-GE3
Description MOSFET 2N-CH 30V 8A 8-SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,112
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 18 - Feb 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4276DY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4276DY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI4276DY-T1-GE3, SI4276DY-T1-GE3 Datasheet (Total Pages: 12, Size: 160.81 KB)
PDFSI4276DY-T1-GE3 Datasheet Cover
SI4276DY-T1-GE3 Datasheet Page 2 SI4276DY-T1-GE3 Datasheet Page 3 SI4276DY-T1-GE3 Datasheet Page 4 SI4276DY-T1-GE3 Datasheet Page 5 SI4276DY-T1-GE3 Datasheet Page 6 SI4276DY-T1-GE3 Datasheet Page 7 SI4276DY-T1-GE3 Datasheet Page 8 SI4276DY-T1-GE3 Datasheet Page 9 SI4276DY-T1-GE3 Datasheet Page 10 SI4276DY-T1-GE3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI4276DY-T1-GE3 Datasheet
  • where to find SI4276DY-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SI4276DY-T1-GE3
  • SI4276DY-T1-GE3 PDF Datasheet
  • SI4276DY-T1-GE3 Stock

  • SI4276DY-T1-GE3 Pinout
  • Datasheet SI4276DY-T1-GE3
  • SI4276DY-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SI4276DY-T1-GE3 Price
  • SI4276DY-T1-GE3 Distributor

SI4276DY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8A
Rds On (Max) @ Id, Vgs15.3mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 15V
Power - Max3.6W, 2.8W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

The Products You May Be Interested In

SQJQ980EL-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Rds On (Max) @ Id, Vgs

13.5mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1995pF @ 40V

Power - Max

187W

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® 8 x 8 Dual

Supplier Device Package

PowerPAK® 8 x 8 Dual

APTC80H15T1G

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

4 N-Channel (H-Bridge)

FET Feature

Standard

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

28A

Rds On (Max) @ Id, Vgs

150mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

3.9V @ 2mA

Gate Charge (Qg) (Max) @ Vgs

180nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

4507pF @ 25V

Power - Max

277W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP1

Supplier Device Package

SP1

FDC6401N

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3A

Rds On (Max) @ Id, Vgs

70mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

324pF @ 10V

Power - Max

700mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

SuperSOT™-6

IRF7756GTRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

4.3A

Rds On (Max) @ Id, Vgs

40mOhm @ 4.3A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 10V

Power - Max

1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP

FDY2001PZ

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

150mA

Rds On (Max) @ Id, Vgs

8Ohm @ 150mA, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

100pF @ 10V

Power - Max

446mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SOT-563F

Recently Sold

GSOT05C-E3-08

GSOT05C-E3-08

Vishay Semiconductor Diodes Division

TVS DIODE 5V 16V SOT23-3

MT41J512M8RH-093:E

MT41J512M8RH-093:E

Micron Technology Inc.

IC DRAM 4G PARALLEL 78FBGA

GP1S094HCZ0F

GP1S094HCZ0F

SHARP/Socle Technology

SENSOR OPT SLOT PHOTOTRAN PCB MT

LNBH25LSPQR

LNBH25LSPQR

STMicroelectronics

IC REG CONV SAT TV 1OUT 24QFN

IHLP1212BZER1R5M11

IHLP1212BZER1R5M11

Vishay Dale

FIXED IND 1.5UH 3.8A 32 MOHM SMD

NDS331N

NDS331N

ON Semiconductor

MOSFET N-CH 20V 1.3A SSOT3

SHT21

SHT21

Sensirion AG

SENSOR HUMID/TEMP 3V I2C 2% SMD

BZX84C3V9

BZX84C3V9

ON Semiconductor

DIODE ZENER 3.9V 350MW SOT23-3

USB2517-JZX-TR

USB2517-JZX-TR

Microchip Technology

IC USB 2.0 7PORT HUB CTLR 64QFN

6TPE330MIL

6TPE330MIL

Panasonic Electronic Components

CAP TANT POLY 330UF 6.3V 2917

B360A-13-F

B360A-13-F

Diodes Incorporated

DIODE SCHOTTKY 60V 3A SMA

BZT52C8V2S-7-F

BZT52C8V2S-7-F

Diodes Incorporated

DIODE ZENER 8.2V 200MW SOD323