SI4214DY-T1-GE3
For Reference Only
| Part Number | SI4214DY-T1-GE3 |
| PNEDA Part # | SI4214DY-T1-GE3 |
| Description | MOSFET 2N-CH 30V 8.5A 8-SOIC |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 6,894 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 18 - Apr 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SI4214DY-T1-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SI4214DY-T1-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SI4214DY-T1-GE3 Datasheet
- where to find SI4214DY-T1-GE3
- Vishay Siliconix
- Vishay Siliconix SI4214DY-T1-GE3
- SI4214DY-T1-GE3 PDF Datasheet
- SI4214DY-T1-GE3 Stock
- SI4214DY-T1-GE3 Pinout
- Datasheet SI4214DY-T1-GE3
- SI4214DY-T1-GE3 Supplier
- Vishay Siliconix Distributor
- SI4214DY-T1-GE3 Price
- SI4214DY-T1-GE3 Distributor
SI4214DY-T1-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8.5A |
| Rds On (Max) @ Id, Vgs | 23.5mOhm @ 7A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 785pF @ 15V |
| Power - Max | 3.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
The Products You May Be Interested In
|
Manufacturer Diodes Incorporated Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.5A Rds On (Max) @ Id, Vgs 28mOhm @ 6A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 472pF @ 15V Power - Max 1.8W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Microsemi Corporation Series POWER MOS 7® FET Type 6 N-Channel (3-Phase Bridge) FET Feature Standard Drain to Source Voltage (Vdss) 1000V (1kV) Current - Continuous Drain (Id) @ 25°C 22A Rds On (Max) @ Id, Vgs 420mOhm @ 11A, 10V Vgs(th) (Max) @ Id 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 186nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 25V Power - Max 390W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case Module Supplier Device Package SP6-P |
Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10A (Ta), 40A (Ta) Rds On (Max) @ Id, Vgs 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V Vgs(th) (Max) @ Id 2.5V @ 4mA, 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs 4.9nC @ 15V, 19nC @ 15V Input Capacitance (Ciss) (Max) @ Vds 475pF @ 15V, 1960pF @ 15V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
Manufacturer Alpha & Omega Semiconductor Inc. Series XSPairFET™ FET Type 2 N-Channel (Dual) Asymmetrical FET Feature Standard Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id 1.9V @ 250µA, 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24nC, 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1.15nF, 4.52nF @ 12.5V Power - Max 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerVDFN Supplier Device Package 8-DFN (5x6) |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type 2 N-Channel (Dual) Common Drain FET Feature Standard Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 2.5W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-XDFN Supplier Device Package 6-DFN (3.05x1.77) |
