Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI4124DY-T1-GE3

SI4124DY-T1-GE3

For Reference Only

Part Number SI4124DY-T1-GE3
PNEDA Part # SI4124DY-T1-GE3
Description MOSFET N-CH 40V 20.5A 8-SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 20,820
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4124DY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4124DY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI4124DY-T1-GE3, SI4124DY-T1-GE3 Datasheet (Total Pages: 9, Size: 186.53 KB)
PDFSI4124DY-T1-E3 Datasheet Cover
SI4124DY-T1-E3 Datasheet Page 2 SI4124DY-T1-E3 Datasheet Page 3 SI4124DY-T1-E3 Datasheet Page 4 SI4124DY-T1-E3 Datasheet Page 5 SI4124DY-T1-E3 Datasheet Page 6 SI4124DY-T1-E3 Datasheet Page 7 SI4124DY-T1-E3 Datasheet Page 8 SI4124DY-T1-E3 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI4124DY-T1-GE3 Datasheet
  • where to find SI4124DY-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SI4124DY-T1-GE3
  • SI4124DY-T1-GE3 PDF Datasheet
  • SI4124DY-T1-GE3 Stock

  • SI4124DY-T1-GE3 Pinout
  • Datasheet SI4124DY-T1-GE3
  • SI4124DY-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SI4124DY-T1-GE3 Price
  • SI4124DY-T1-GE3 Distributor

SI4124DY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C20.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.5mOhm @ 14A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs77nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3540pF @ 20V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 5.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

IRF6215SPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

290mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

66nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

860pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRF6898MTR1PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

35A (Ta), 213A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.1mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

2.1V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

62nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

5435pF @ 13V

FET Feature

Schottky Diode (Body)

Power Dissipation (Max)

2.1W (Ta), 78W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ MX

Package / Case

DirectFET™ Isometric MX

AON6500_001

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

71A (Ta), 200A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

0.95mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

145nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7036pF @ 15V

FET Feature

-

Power Dissipation (Max)

7.3W (Ta), 83W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN (5x6)

Package / Case

8-PowerSMD, Flat Leads

NTP5860NLG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

220A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

180nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10760pF @ 25V

FET Feature

-

Power Dissipation (Max)

283W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

PSMN2R5-60PLQ

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

150A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

223nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

349W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

JANTX1N4148-1

JANTX1N4148-1

Microsemi

DIODE GEN PURP 75V 200MA DO35

KSZ8863MLLI

KSZ8863MLLI

Microchip Technology

IC ETHERNET SWITCH 3PORT 48-LQFP

ISL3259EIBZ-T

ISL3259EIBZ-T

Renesas Electronics America Inc.

IC TRANSCEIVER HALF 1/1 8SOIC

BLM31PG391SN1L

BLM31PG391SN1L

Murata

FERRITE BEAD 390 OHM 1206 1LN

VLMS1300-GS08

VLMS1300-GS08

Vishay Semiconductor Opto Division

LED RED 0603 SMD

USB4604-1080HN

USB4604-1080HN

Microchip Technology

IC USB HUB/FLASH CTLR 48QFN

CP2102-GM

CP2102-GM

Silicon Labs

IC USB-TO-UART BRIDGE 28VQFN

ADM3252EABCZ

ADM3252EABCZ

Analog Devices

DGTL ISO 2.5KV 4CH RS232 44BGA

4608X-102-682LF

4608X-102-682LF

Bourns

RES ARRAY 4 RES 6.8K OHM 8SIP

MCP73832T-2ATI/OT

MCP73832T-2ATI/OT

Microchip Technology

IC LI-ION/LI-POLY CTRLR SOT23-5

TSM2323CX RFG

TSM2323CX RFG

Taiwan Semiconductor Corporation

MOSFET P-CHANNEL 20V 4.7A SOT23

J201

J201

ON Semiconductor

JFET N-CH 40V 0.625W TO92