SI3909DV-T1-GE3
For Reference Only
Part Number | SI3909DV-T1-GE3 |
PNEDA Part # | SI3909DV-T1-GE3 |
Description | MOSFET 2P-CH 20V 6TSOP |
Manufacturer | Vishay Siliconix |
Unit Price | Request a Quote |
In Stock | 4,104 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 30 - Dec 5 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SI3909DV-T1-GE3 Resources
Brand | Vishay Siliconix |
ECAD Module | |
Mfr. Part Number | SI3909DV-T1-GE3 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
Datasheet |
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SI3909DV-T1-GE3 Specifications
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | - |
Rds On (Max) @ Id, Vgs | 200mOhm @ 1.8A, 4.5V |
Vgs(th) (Max) @ Id | 500mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.15W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package | 6-TSOP |
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