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SI3879DV-T1-E3

SI3879DV-T1-E3

For Reference Only

Part Number SI3879DV-T1-E3
PNEDA Part # SI3879DV-T1-E3
Description MOSFET P-CH 20V 5A 6-TSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,166
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI3879DV-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI3879DV-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI3879DV-T1-E3, SI3879DV-T1-E3 Datasheet (Total Pages: 10, Size: 139.47 KB)
PDFSI3879DV-T1-GE3 Datasheet Cover
SI3879DV-T1-GE3 Datasheet Page 2 SI3879DV-T1-GE3 Datasheet Page 3 SI3879DV-T1-GE3 Datasheet Page 4 SI3879DV-T1-GE3 Datasheet Page 5 SI3879DV-T1-GE3 Datasheet Page 6 SI3879DV-T1-GE3 Datasheet Page 7 SI3879DV-T1-GE3 Datasheet Page 8 SI3879DV-T1-GE3 Datasheet Page 9 SI3879DV-T1-GE3 Datasheet Page 10

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SI3879DV-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesLITTLE FOOT®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs70mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14.5nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds480pF @ 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 3.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6 Thin, TSOT-23-6

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