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SI3851DV-T1-E3

SI3851DV-T1-E3

For Reference Only

Part Number SI3851DV-T1-E3
PNEDA Part # SI3851DV-T1-E3
Description MOSFET P-CH 30V 1.6A 6-TSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,268
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI3851DV-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI3851DV-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI3851DV-T1-E3, SI3851DV-T1-E3 Datasheet (Total Pages: 7, Size: 120.89 KB)
PDFSI3851DV-T1-E3 Datasheet Cover
SI3851DV-T1-E3 Datasheet Page 2 SI3851DV-T1-E3 Datasheet Page 3 SI3851DV-T1-E3 Datasheet Page 4 SI3851DV-T1-E3 Datasheet Page 5 SI3851DV-T1-E3 Datasheet Page 6 SI3851DV-T1-E3 Datasheet Page 7

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SI3851DV-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesLITTLE FOOT®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs200mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs3.6nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)830mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6 Thin, TSOT-23-6

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