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SI3529DV-T1-E3

SI3529DV-T1-E3

For Reference Only

Part Number SI3529DV-T1-E3
PNEDA Part # SI3529DV-T1-E3
Description MOSFET N/P-CH 40V 2.5A 6-TSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,274
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI3529DV-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI3529DV-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI3529DV-T1-E3, SI3529DV-T1-E3 Datasheet (Total Pages: 12, Size: 146.83 KB)
PDFSI3529DV-T1-GE3 Datasheet Cover
SI3529DV-T1-GE3 Datasheet Page 2 SI3529DV-T1-GE3 Datasheet Page 3 SI3529DV-T1-GE3 Datasheet Page 4 SI3529DV-T1-GE3 Datasheet Page 5 SI3529DV-T1-GE3 Datasheet Page 6 SI3529DV-T1-GE3 Datasheet Page 7 SI3529DV-T1-GE3 Datasheet Page 8 SI3529DV-T1-GE3 Datasheet Page 9 SI3529DV-T1-GE3 Datasheet Page 10 SI3529DV-T1-GE3 Datasheet Page 11

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SI3529DV-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C2.5A, 1.95A
Rds On (Max) @ Id, Vgs125mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds205pF @ 20V
Power - Max1.4W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

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