Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI3483DV-T1-E3

SI3483DV-T1-E3

For Reference Only

Part Number SI3483DV-T1-E3
PNEDA Part # SI3483DV-T1-E3
Description MOSFET P-CH 30V 4.7A 6-TSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,030
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI3483DV-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI3483DV-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI3483DV-T1-E3, SI3483DV-T1-E3 Datasheet (Total Pages: 6, Size: 524.56 KB)
PDFSI3483DV-T1-GE3 Datasheet Cover
SI3483DV-T1-GE3 Datasheet Page 2 SI3483DV-T1-GE3 Datasheet Page 3 SI3483DV-T1-GE3 Datasheet Page 4 SI3483DV-T1-GE3 Datasheet Page 5 SI3483DV-T1-GE3 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI3483DV-T1-E3 Datasheet
  • where to find SI3483DV-T1-E3
  • Vishay Siliconix

  • Vishay Siliconix SI3483DV-T1-E3
  • SI3483DV-T1-E3 PDF Datasheet
  • SI3483DV-T1-E3 Stock

  • SI3483DV-T1-E3 Pinout
  • Datasheet SI3483DV-T1-E3
  • SI3483DV-T1-E3 Supplier

  • Vishay Siliconix Distributor
  • SI3483DV-T1-E3 Price
  • SI3483DV-T1-E3 Distributor

SI3483DV-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs35mOhm @ 6.2A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.14W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6 Thin, TSOT-23-6

The Products You May Be Interested In

SI4410BDY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

7.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

13.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.4W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

IPB05N03LA G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.6mOhm @ 55A, 10V

Vgs(th) (Max) @ Id

2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3110pF @ 15V

FET Feature

-

Power Dissipation (Max)

94W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

3N163-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

50mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

250Ohm @ 100µA, 20V

Vgs(th) (Max) @ Id

5V @ 10µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3.5pF @ 15V

FET Feature

-

Power Dissipation (Max)

375mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-72

Package / Case

TO-206AF, TO-72-4 Metal Can

FDP79N15

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UniFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

79A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

30mOhm @ 39.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

73nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3410pF @ 25V

FET Feature

-

Power Dissipation (Max)

463W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

IXTH90N15T

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

20mOhm @ 45A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

80nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4100pF @ 25V

FET Feature

-

Power Dissipation (Max)

455W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

Recently Sold

MP2144GJ-Z

MP2144GJ-Z

Monolithic Power Systems Inc.

IC REG BUCK ADJ 2A TSOT23-8

RB481KTL

RB481KTL

Rohm Semiconductor

DIODE ARRAY SCHOTTKY 30V UMD4

M24M01-RMN6P

M24M01-RMN6P

STMicroelectronics

IC EEPROM 1M I2C 1MHZ 8SO

MCP1826-3302E/ET

MCP1826-3302E/ET

Microchip Technology

IC REG LINEAR 3.3V 1A 5DDPAK

AT24C04D-SSHM-T

AT24C04D-SSHM-T

Microchip Technology

IC EEPROM 4K I2C 1MHZ 8SOIC

HX1198FNL

HX1198FNL

Pulse Electronics Network

PULSE XFMR 1CT:1CT TX 1CT:1CT RX

PM450CLA060

PM450CLA060

Powerex Inc.

MOD IPM L-SER 6PAC 600V 450A

NB-PTCO-157

NB-PTCO-157

TE Connectivity Measurement Specialties

SENSOR RTD 1KOHM 0.001% 2SIP

ADF4350BCPZ-RL7

ADF4350BCPZ-RL7

Analog Devices

IC SYNTH PLL VCO FN/IN 32LFCSP

BZX84C3V3

BZX84C3V3

ON Semiconductor

DIODE ZENER 3.3V 350MW SOT23-3

USB2517-JZX-TR

USB2517-JZX-TR

Microchip Technology

IC USB 2.0 7PORT HUB CTLR 64QFN

SMAJ33CA

SMAJ33CA

Bourns

TVS DIODE 33V 53.3V SMA