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SI3456DDV-T1-GE3

SI3456DDV-T1-GE3

For Reference Only

Part Number SI3456DDV-T1-GE3
PNEDA Part # SI3456DDV-T1-GE3
Description MOSFET N-CH 30V 6.3A 6-TSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 1,047,546
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI3456DDV-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI3456DDV-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI3456DDV-T1-GE3, SI3456DDV-T1-GE3 Datasheet (Total Pages: 11, Size: 197.57 KB)
PDFSI3456DDV-T1-E3 Datasheet Cover
SI3456DDV-T1-E3 Datasheet Page 2 SI3456DDV-T1-E3 Datasheet Page 3 SI3456DDV-T1-E3 Datasheet Page 4 SI3456DDV-T1-E3 Datasheet Page 5 SI3456DDV-T1-E3 Datasheet Page 6 SI3456DDV-T1-E3 Datasheet Page 7 SI3456DDV-T1-E3 Datasheet Page 8 SI3456DDV-T1-E3 Datasheet Page 9 SI3456DDV-T1-E3 Datasheet Page 10 SI3456DDV-T1-E3 Datasheet Page 11

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SI3456DDV-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs40mOhm @ 5A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds325pF @ 15V
FET Feature-
Power Dissipation (Max)1.7W (Ta), 2.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6 Thin, TSOT-23-6

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Gate Charge (Qg) (Max) @ Vgs

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