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SI3430DV-T1-GE3

SI3430DV-T1-GE3

For Reference Only

Part Number SI3430DV-T1-GE3
PNEDA Part # SI3430DV-T1-GE3
Description MOSFET N-CH 100V 1.8A 6-TSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 25,374
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI3430DV-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI3430DV-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI3430DV-T1-GE3, SI3430DV-T1-GE3 Datasheet (Total Pages: 9, Size: 227.68 KB)
PDFSI3430DV-T1-GE3 Datasheet Cover
SI3430DV-T1-GE3 Datasheet Page 2 SI3430DV-T1-GE3 Datasheet Page 3 SI3430DV-T1-GE3 Datasheet Page 4 SI3430DV-T1-GE3 Datasheet Page 5 SI3430DV-T1-GE3 Datasheet Page 6 SI3430DV-T1-GE3 Datasheet Page 7 SI3430DV-T1-GE3 Datasheet Page 8 SI3430DV-T1-GE3 Datasheet Page 9

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SI3430DV-T1-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs170mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs6.6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.14W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6 Thin, TSOT-23-6

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