SI3127DV-T1-GE3
For Reference Only
| Part Number | SI3127DV-T1-GE3 |
| PNEDA Part # | SI3127DV-T1-GE3 |
| Description | MOSFET P-CHAN 60V TSOP6S |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 29,604 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SI3127DV-T1-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
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| Mfr. Part Number | SI3127DV-T1-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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SI3127DV-T1-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta), 13A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 89mOhm @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 833pF @ 20V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 4.2W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-TSOP |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
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Manufacturer Toshiba Semiconductor and Storage Series U-MOSIV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 27.6mOhm @ 4A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 10.1nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 450pF @ 15V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TSM Package / Case TO-236-3, SC-59, SOT-23-3 |
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Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3Ohm @ 1.4A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 42W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251AA Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
