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SI2337DS-T1-E3

SI2337DS-T1-E3

For Reference Only

Part Number SI2337DS-T1-E3
PNEDA Part # SI2337DS-T1-E3
Description MOSFET P-CH 80V 2.2A SOT23-3
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 354,444
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 18 - Feb 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI2337DS-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI2337DS-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI2337DS-T1-E3, SI2337DS-T1-E3 Datasheet (Total Pages: 10, Size: 255.25 KB)
PDFSI2337DS-T1-GE3 Datasheet Cover
SI2337DS-T1-GE3 Datasheet Page 2 SI2337DS-T1-GE3 Datasheet Page 3 SI2337DS-T1-GE3 Datasheet Page 4 SI2337DS-T1-GE3 Datasheet Page 5 SI2337DS-T1-GE3 Datasheet Page 6 SI2337DS-T1-GE3 Datasheet Page 7 SI2337DS-T1-GE3 Datasheet Page 8 SI2337DS-T1-GE3 Datasheet Page 9 SI2337DS-T1-GE3 Datasheet Page 10

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SI2337DS-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs270mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds500pF @ 40V
FET Feature-
Power Dissipation (Max)760mW (Ta), 2.5W (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

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