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SI2335DS-T1-E3

SI2335DS-T1-E3

For Reference Only

Part Number SI2335DS-T1-E3
PNEDA Part # SI2335DS-T1-E3
Description MOSFET P-CH 12V 3.2A SOT23
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,264
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI2335DS-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI2335DS-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI2335DS-T1-E3, SI2335DS-T1-E3 Datasheet (Total Pages: 5, Size: 80.19 KB)
PDFSI2335DS-T1-E3 Datasheet Cover
SI2335DS-T1-E3 Datasheet Page 2 SI2335DS-T1-E3 Datasheet Page 3 SI2335DS-T1-E3 Datasheet Page 4 SI2335DS-T1-E3 Datasheet Page 5

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SI2335DS-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs51mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1225pF @ 6V
FET Feature-
Power Dissipation (Max)750mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

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