SI2335DS-T1-E3

For Reference Only
Part Number | SI2335DS-T1-E3 |
PNEDA Part # | SI2335DS-T1-E3 |
Description | MOSFET P-CH 12V 3.2A SOT23 |
Manufacturer | Vishay Siliconix |
Unit Price | Request a Quote |
In Stock | 6,264 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
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SI2335DS-T1-E3 Resources
Brand | Vishay Siliconix |
ECAD Module |
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Mfr. Part Number | SI2335DS-T1-E3 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
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SI2335DS-T1-E3 Specifications
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 51mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 1225pF @ 6V |
FET Feature | - |
Power Dissipation (Max) | 750mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 (TO-236) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
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