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SI2311DS-T1-GE3

SI2311DS-T1-GE3

For Reference Only

Part Number SI2311DS-T1-GE3
PNEDA Part # SI2311DS-T1-GE3
Description MOSFET P-CH 8V 3A SOT23
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,406
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI2311DS-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI2311DS-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI2311DS-T1-GE3, SI2311DS-T1-GE3 Datasheet (Total Pages: 5, Size: 103.52 KB)
PDFSI2311DS-T1-GE3 Datasheet Cover
SI2311DS-T1-GE3 Datasheet Page 2 SI2311DS-T1-GE3 Datasheet Page 3 SI2311DS-T1-GE3 Datasheet Page 4 SI2311DS-T1-GE3 Datasheet Page 5

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SI2311DS-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs45mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds970pF @ 4V
FET Feature-
Power Dissipation (Max)710mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3

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