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SI2308BDS-T1-GE3

SI2308BDS-T1-GE3

For Reference Only

Part Number SI2308BDS-T1-GE3
PNEDA Part # SI2308BDS-T1-GE3
Description MOSFET N-CH 60V 2.3A SOT23-3
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,696
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI2308BDS-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI2308BDS-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI2308BDS-T1-GE3, SI2308BDS-T1-GE3 Datasheet (Total Pages: 10, Size: 251.25 KB)
PDFSI2308BDS-T1-GE3 Datasheet Cover
SI2308BDS-T1-GE3 Datasheet Page 2 SI2308BDS-T1-GE3 Datasheet Page 3 SI2308BDS-T1-GE3 Datasheet Page 4 SI2308BDS-T1-GE3 Datasheet Page 5 SI2308BDS-T1-GE3 Datasheet Page 6 SI2308BDS-T1-GE3 Datasheet Page 7 SI2308BDS-T1-GE3 Datasheet Page 8 SI2308BDS-T1-GE3 Datasheet Page 9 SI2308BDS-T1-GE3 Datasheet Page 10

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SI2308BDS-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs156mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.8nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds190pF @ 30V
FET Feature-
Power Dissipation (Max)1.09W (Ta), 1.66W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

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