SI2302ADS-T1-GE3
For Reference Only
| Part Number | SI2302ADS-T1-GE3 |
| PNEDA Part # | SI2302ADS-T1-GE3 |
| Description | MOSFET N-CH 20V 2.1A SOT23-3 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 8,496 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Feb 19 - Feb 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SI2302ADS-T1-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
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| Mfr. Part Number | SI2302ADS-T1-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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SI2302ADS-T1-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 3.6A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 750mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V FET Feature - Power Dissipation (Max) 170W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
