SI1926DL-T1-GE3
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For Reference Only
Part Number | SI1926DL-T1-GE3 |
PNEDA Part # | SI1926DL-T1-GE3 |
Description | MOSFET 2N-CH 60V 0.37A SOT363 |
Manufacturer | Vishay Siliconix |
Unit Price | Request a Quote |
In Stock | 6,858 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Feb 18 - Feb 23 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
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SI1926DL-T1-GE3 Resources
Brand | Vishay Siliconix |
ECAD Module |
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Mfr. Part Number | SI1926DL-T1-GE3 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
Datasheet |
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SI1926DL-T1-GE3 Specifications
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 370mA |
Rds On (Max) @ Id, Vgs | 1.4Ohm @ 340mA, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 18.5pF @ 30V |
Power - Max | 510mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-70-6 (SOT-363) |
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