Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI1926DL-T1-GE3

SI1926DL-T1-GE3

For Reference Only

Part Number SI1926DL-T1-GE3
PNEDA Part # SI1926DL-T1-GE3
Description MOSFET 2N-CH 60V 0.37A SOT363
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,858
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 20 - Apr 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1926DL-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1926DL-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI1926DL-T1-GE3, SI1926DL-T1-GE3 Datasheet (Total Pages: 11, Size: 248.57 KB)
PDFSI1926DL-T1-GE3 Datasheet Cover
SI1926DL-T1-GE3 Datasheet Page 2 SI1926DL-T1-GE3 Datasheet Page 3 SI1926DL-T1-GE3 Datasheet Page 4 SI1926DL-T1-GE3 Datasheet Page 5 SI1926DL-T1-GE3 Datasheet Page 6 SI1926DL-T1-GE3 Datasheet Page 7 SI1926DL-T1-GE3 Datasheet Page 8 SI1926DL-T1-GE3 Datasheet Page 9 SI1926DL-T1-GE3 Datasheet Page 10 SI1926DL-T1-GE3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI1926DL-T1-GE3 Datasheet
  • where to find SI1926DL-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SI1926DL-T1-GE3
  • SI1926DL-T1-GE3 PDF Datasheet
  • SI1926DL-T1-GE3 Stock

  • SI1926DL-T1-GE3 Pinout
  • Datasheet SI1926DL-T1-GE3
  • SI1926DL-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SI1926DL-T1-GE3 Price
  • SI1926DL-T1-GE3 Distributor

SI1926DL-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C370mA
Rds On (Max) @ Id, Vgs1.4Ohm @ 340mA, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds18.5pF @ 30V
Power - Max510mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-70-6 (SOT-363)

The Products You May Be Interested In

FDMD85100

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

2 N-Channel (Half Bridge)

FET Feature

Standard

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

10.4A

Rds On (Max) @ Id, Vgs

9.9mOhm @ 10.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

2230pF @ 50V

Power - Max

2.2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerWDFN

Supplier Device Package

8-Power 5x6

ZXMD63P02XTC

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

-

Rds On (Max) @ Id, Vgs

270mOhm @ 1.2A, 4.5V

Vgs(th) (Max) @ Id

700mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

5.25nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

290pF @ 15V

Power - Max

1.04W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Supplier Device Package

8-MSOP

DMTH6016LPD-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

9.2A (Ta), 33.2A (Tc)

Rds On (Max) @ Id, Vgs

19mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

864pF @ 30V

Power - Max

2.5W (Ta), 37.5W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Supplier Device Package

PowerDI5060-8

ZXMD63C02XTA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

-

Rds On (Max) @ Id, Vgs

130mOhm @ 1.7A, 4.5V

Vgs(th) (Max) @ Id

700mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 15V

Power - Max

1.04W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Supplier Device Package

8-MSOP

APTM100A13SCG

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

2 N-Channel (Half Bridge)

FET Feature

Standard

Drain to Source Voltage (Vdss)

1000V (1kV)

Current - Continuous Drain (Id) @ 25°C

65A

Rds On (Max) @ Id, Vgs

156mOhm @ 32.5A, 10V

Vgs(th) (Max) @ Id

5V @ 6mA

Gate Charge (Qg) (Max) @ Vgs

562nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

15200pF @ 25V

Power - Max

1250W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP6

Supplier Device Package

SP6

Recently Sold

ASPIAIG-F7030-4R7M-T

ASPIAIG-F7030-4R7M-T

Abracon

FIXED IND 4.7UH 9A 26.7MOHM

20CTQ045

20CTQ045

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 45V TO220AB

BC807-16LT1G

BC807-16LT1G

ON Semiconductor

TRANS PNP 45V 0.5A SOT-23

MAX912ESE+

MAX912ESE+

Maxim Integrated

IC COMPARATOR LP 16-SOIC

ATMEGA32U4-MUR

ATMEGA32U4-MUR

Microchip Technology

IC MCU 8BIT 32KB FLASH 44VQFN

F55J25R

F55J25R

Ohmite

RES CHAS MNT 25 OHM 5% 55W

DG455EY-T1-E3

DG455EY-T1-E3

Vishay Siliconix

IC SWITCH QUAD SPST 16SOIC

0ZCJ0025AF2E

0ZCJ0025AF2E

Bel Fuse

PTC RESET FUSE 24V 250MA 1206

SRR0735A-100M

SRR0735A-100M

Bourns

FIXED IND 10UH 2.1A 72 MOHM SMD

HCTL-1101-PLC

HCTL-1101-PLC

Broadcom

IC MOTOR DRIVER BIPOLAR 44PLCC

MIC2026-1YM

MIC2026-1YM

Microchip Technology

IC PW DIST SW DUAL 8SOIC

MSS1P4-M3/89A

MSS1P4-M3/89A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1A MICROSMP