Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI1922EDH-T1-GE3

SI1922EDH-T1-GE3

For Reference Only

Part Number SI1922EDH-T1-GE3
PNEDA Part # SI1922EDH-T1-GE3
Description MOSFET 2N-CH 20V 1.3A SOT-363
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 264,168
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 2 - Feb 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1922EDH-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1922EDH-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI1922EDH-T1-GE3, SI1922EDH-T1-GE3 Datasheet (Total Pages: 12, Size: 261.21 KB)
PDFSI1922EDH-T1-GE3 Datasheet Cover
SI1922EDH-T1-GE3 Datasheet Page 2 SI1922EDH-T1-GE3 Datasheet Page 3 SI1922EDH-T1-GE3 Datasheet Page 4 SI1922EDH-T1-GE3 Datasheet Page 5 SI1922EDH-T1-GE3 Datasheet Page 6 SI1922EDH-T1-GE3 Datasheet Page 7 SI1922EDH-T1-GE3 Datasheet Page 8 SI1922EDH-T1-GE3 Datasheet Page 9 SI1922EDH-T1-GE3 Datasheet Page 10 SI1922EDH-T1-GE3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI1922EDH-T1-GE3 Datasheet
  • where to find SI1922EDH-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SI1922EDH-T1-GE3
  • SI1922EDH-T1-GE3 PDF Datasheet
  • SI1922EDH-T1-GE3 Stock

  • SI1922EDH-T1-GE3 Pinout
  • Datasheet SI1922EDH-T1-GE3
  • SI1922EDH-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SI1922EDH-T1-GE3 Price
  • SI1922EDH-T1-GE3 Distributor

SI1922EDH-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.3A
Rds On (Max) @ Id, Vgs198mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs2.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.25W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-70-6 (SOT-363)

The Products You May Be Interested In

APTC90HM60T3G

Microsemi

Manufacturer

Microsemi Corporation

Series

CoolMOS™

FET Type

4 N-Channel (H-Bridge)

FET Feature

Super Junction

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

59A

Rds On (Max) @ Id, Vgs

60mOhm @ 52A, 10V

Vgs(th) (Max) @ Id

3.5V @ 6mA

Gate Charge (Qg) (Max) @ Vgs

540nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

13600pF @ 100V

Power - Max

462W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP3

Supplier Device Package

SP3

SSD2025TF

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

3.3A

Rds On (Max) @ Id, Vgs

100mOhm @ 3.3A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC

NTMFD4902NFT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

2 N-Channel (Dual), Schottky

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

10.3A, 13.3A

Rds On (Max) @ Id, Vgs

6.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.7nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1150pF @ 15V

Power - Max

1.1W, 1.16W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Supplier Device Package

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

Manufacturer

Microsemi Corporation

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

1000V (1kV)

Current - Continuous Drain (Id) @ 25°C

20A

Rds On (Max) @ Id, Vgs

720mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

6000pF @ 25V

Power - Max

520W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP3

Supplier Device Package

SP3

Manufacturer

IXYS

Series

HiPerFET™, TrenchT2™

FET Type

2 N-Channel (Dual) Asymmetrical

FET Feature

Standard

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

120A

Rds On (Max) @ Id, Vgs

5.8mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

178nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

10500pF @ 25V

Power - Max

170W

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

ISOPLUSi5-Pak™

Supplier Device Package

ISOPLUS i4-PAC™

Recently Sold

IS61WV102416BLL-10TLI

IS61WV102416BLL-10TLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 16M PARALLEL 48TSOP I

KSC341JLFS

KSC341JLFS

C&K

SWITCH TACTILE SPST-NO 0.05A 32V

PC28F00AP30EFA

PC28F00AP30EFA

Micron Technology Inc.

IC FLASH 1G PARALLEL 64EASYBGA

PEX8734-AB80BI G

PEX8734-AB80BI G

Broadcom

PEX8734-AB80BI G

BSS138

BSS138

MICROSS/On Semiconductor

MOSFET N-CH 50V 220MA DIE

CS42426-CQZ

CS42426-CQZ

Cirrus Logic Inc.

IC CODEC 6CH PLL 192KHZ 64LQFP

NLC565050T-101K-PF

NLC565050T-101K-PF

TDK

FIXED IND 100UH 250MA 1.6 OHM

DS2482S-100+T&R

DS2482S-100+T&R

Maxim Integrated

IC I2C TO 1WIRE BRIDGE 8SOIC

1N4148WS-7-F

1N4148WS-7-F

Diodes Incorporated

DIODE GEN PURP 75V 150MA SOD323

AT49F040-12TI

AT49F040-12TI

Microchip Technology

IC FLASH 4M PARALLEL 32TSOP

FT232RL-REEL

FT232RL-REEL

FTDI, Future Technology Devices International Ltd

IC USB FS SERIAL UART 28-SSOP

CY2309SXI-1H

CY2309SXI-1H

Cypress Semiconductor

IC CLK ZDB 9OUT 133MHZ 16SOIC