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SI1539DDL-T1-GE3

SI1539DDL-T1-GE3

For Reference Only

Part Number SI1539DDL-T1-GE3
PNEDA Part # SI1539DDL-T1-GE3
Description MOSFET N/P-CH 30V SC70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,346
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1539DDL-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1539DDL-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI1539DDL-T1-GE3, SI1539DDL-T1-GE3 Datasheet (Total Pages: 16, Size: 282.68 KB)
PDFSI1539DDL-T1-GE3 Datasheet Cover
SI1539DDL-T1-GE3 Datasheet Page 2 SI1539DDL-T1-GE3 Datasheet Page 3 SI1539DDL-T1-GE3 Datasheet Page 4 SI1539DDL-T1-GE3 Datasheet Page 5 SI1539DDL-T1-GE3 Datasheet Page 6 SI1539DDL-T1-GE3 Datasheet Page 7 SI1539DDL-T1-GE3 Datasheet Page 8 SI1539DDL-T1-GE3 Datasheet Page 9 SI1539DDL-T1-GE3 Datasheet Page 10 SI1539DDL-T1-GE3 Datasheet Page 11

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SI1539DDL-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN and P-Channel
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C700mA (Tc), 460mA (Tc)
Rds On (Max) @ Id, Vgs388mOhm @ 600mA, 10V, 1.07Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA, 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.1nC @ 4.5V, 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds28pF @ 15V, 21pF @ 15V
Power - Max340mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-70-6

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