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SI1450DH-T1-GE3

SI1450DH-T1-GE3

For Reference Only

Part Number SI1450DH-T1-GE3
PNEDA Part # SI1450DH-T1-GE3
Description MOSFET N-CH 8V 4.53A SC70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,904
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1450DH-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1450DH-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1450DH-T1-GE3, SI1450DH-T1-GE3 Datasheet (Total Pages: 7, Size: 117.38 KB)
PDFSI1450DH-T1-GE3 Datasheet Cover
SI1450DH-T1-GE3 Datasheet Page 2 SI1450DH-T1-GE3 Datasheet Page 3 SI1450DH-T1-GE3 Datasheet Page 4 SI1450DH-T1-GE3 Datasheet Page 5 SI1450DH-T1-GE3 Datasheet Page 6 SI1450DH-T1-GE3 Datasheet Page 7

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SI1450DH-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C4.53A (Ta), 6.04A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs47mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.05nC @ 5V
Vgs (Max)±5V
Input Capacitance (Ciss) (Max) @ Vds535pF @ 4V
FET Feature-
Power Dissipation (Max)1.56W (Ta), 2.78W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-70-6 (SOT-363)
Package / Case6-TSSOP, SC-88, SOT-363

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Drain to Source Voltage (Vdss)

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Operating Temperature

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Mounting Type

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Supplier Device Package

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Package / Case

6-TSSOP, SC-88, SOT-363

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