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SI1330EDL-T1-E3

SI1330EDL-T1-E3

For Reference Only

Part Number SI1330EDL-T1-E3
PNEDA Part # SI1330EDL-T1-E3
Description MOSFET N-CH 60V 240MA SOT323-3
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 55,596
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1330EDL-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1330EDL-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1330EDL-T1-E3, SI1330EDL-T1-E3 Datasheet (Total Pages: 9, Size: 223.37 KB)
PDFSI1330EDL-T1-E3 Datasheet Cover
SI1330EDL-T1-E3 Datasheet Page 2 SI1330EDL-T1-E3 Datasheet Page 3 SI1330EDL-T1-E3 Datasheet Page 4 SI1330EDL-T1-E3 Datasheet Page 5 SI1330EDL-T1-E3 Datasheet Page 6 SI1330EDL-T1-E3 Datasheet Page 7 SI1330EDL-T1-E3 Datasheet Page 8 SI1330EDL-T1-E3 Datasheet Page 9

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SI1330EDL-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)3V, 10V
Rds On (Max) @ Id, Vgs2.5Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.6nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)280mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-70-3
Package / CaseSC-70, SOT-323

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