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SI1307EDL-T1-GE3

SI1307EDL-T1-GE3

For Reference Only

Part Number SI1307EDL-T1-GE3
PNEDA Part # SI1307EDL-T1-GE3
Description MOSFET P-CH 12V 0.85A SC-70-3
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,622
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1307EDL-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1307EDL-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1307EDL-T1-GE3, SI1307EDL-T1-GE3 Datasheet (Total Pages: 6, Size: 100.93 KB)
PDFSI1307EDL-T1-GE3 Datasheet Cover
SI1307EDL-T1-GE3 Datasheet Page 2 SI1307EDL-T1-GE3 Datasheet Page 3 SI1307EDL-T1-GE3 Datasheet Page 4 SI1307EDL-T1-GE3 Datasheet Page 5 SI1307EDL-T1-GE3 Datasheet Page 6

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SI1307EDL-T1-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C850mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs290mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs5nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)290mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-70-3
Package / CaseSC-70, SOT-323

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