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SI1304BDL-T1-GE3

SI1304BDL-T1-GE3

For Reference Only

Part Number SI1304BDL-T1-GE3
PNEDA Part # SI1304BDL-T1-GE3
Description MOSFET N-CH 30V 0.9A SC-70-3
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,050
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1304BDL-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1304BDL-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1304BDL-T1-GE3, SI1304BDL-T1-GE3 Datasheet (Total Pages: 11, Size: 226.97 KB)
PDFSI1304BDL-T1-GE3 Datasheet Cover
SI1304BDL-T1-GE3 Datasheet Page 2 SI1304BDL-T1-GE3 Datasheet Page 3 SI1304BDL-T1-GE3 Datasheet Page 4 SI1304BDL-T1-GE3 Datasheet Page 5 SI1304BDL-T1-GE3 Datasheet Page 6 SI1304BDL-T1-GE3 Datasheet Page 7 SI1304BDL-T1-GE3 Datasheet Page 8 SI1304BDL-T1-GE3 Datasheet Page 9 SI1304BDL-T1-GE3 Datasheet Page 10 SI1304BDL-T1-GE3 Datasheet Page 11

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SI1304BDL-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs270mOhm @ 900mA, 4.5V
Vgs(th) (Max) @ Id1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs2.7nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds100pF @ 15V
FET Feature-
Power Dissipation (Max)340mW (Ta), 370mW (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-70-3
Package / CaseSC-70, SOT-323

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