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SI1303DL-T1-GE3

SI1303DL-T1-GE3

For Reference Only

Part Number SI1303DL-T1-GE3
PNEDA Part # SI1303DL-T1-GE3
Description MOSFET P-CH 20V 670MA SOT323-3
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,052
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1303DL-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1303DL-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1303DL-T1-GE3, SI1303DL-T1-GE3 Datasheet (Total Pages: 5, Size: 106.9 KB)
PDFSI1303DL-T1-GE3 Datasheet Cover
SI1303DL-T1-GE3 Datasheet Page 2 SI1303DL-T1-GE3 Datasheet Page 3 SI1303DL-T1-GE3 Datasheet Page 4 SI1303DL-T1-GE3 Datasheet Page 5

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SI1303DL-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C670mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs430mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs2.2nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)290mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-70-3
Package / CaseSC-70, SOT-323

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