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SI1026X-T1-GE3

SI1026X-T1-GE3

For Reference Only

Part Number SI1026X-T1-GE3
PNEDA Part # SI1026X-T1-GE3
Description MOSFET 2N-CH 60V 0.305A SC89-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 1,201,380
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1026X-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1026X-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI1026X-T1-GE3, SI1026X-T1-GE3 Datasheet (Total Pages: 7, Size: 143.85 KB)
PDFSI1026X-T1-E3 Datasheet Cover
SI1026X-T1-E3 Datasheet Page 2 SI1026X-T1-E3 Datasheet Page 3 SI1026X-T1-E3 Datasheet Page 4 SI1026X-T1-E3 Datasheet Page 5 SI1026X-T1-E3 Datasheet Page 6 SI1026X-T1-E3 Datasheet Page 7

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SI1026X-T1-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C305mA
Rds On (Max) @ Id, Vgs1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds30pF @ 25V
Power - Max250mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSC-89-6

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