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SGR20N40LTM

SGR20N40LTM

For Reference Only

Part Number SGR20N40LTM
PNEDA Part # SGR20N40LTM
Description IGBT 400V 45W DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,726
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SGR20N40LTM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberSGR20N40LTM
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
SGR20N40LTM, SGR20N40LTM Datasheet (Total Pages: 5, Size: 151.16 KB)
PDFSGR20N40LTM Datasheet Cover
SGR20N40LTM Datasheet Page 2 SGR20N40LTM Datasheet Page 3 SGR20N40LTM Datasheet Page 4 SGR20N40LTM Datasheet Page 5

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SGR20N40LTM Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)400V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)150A
Vce(on) (Max) @ Vge, Ic8V @ 4.5V, 150A
Power - Max45W
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageD-Pak

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

1.25V @ 15V, 100A

Power - Max

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Switching Energy

-

Input Type

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Gate Charge

560nC

Td (on/off) @ 25°C

-

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Operating Temperature

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

1.35V @ 15V, 30A

Power - Max

227W

Switching Energy

470µJ (on), 1.35mJ (off)

Input Type

Standard

Gate Charge

168nC

Td (on/off) @ 25°C

33ns/308ns

Test Condition

400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

100ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PG-TO247-3

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

358nC

Td (on/off) @ 25°C

26ns/418ns

Test Condition

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Reverse Recovery Time (trr)

360ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Manufacturer

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Series

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IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

300W

Switching Energy

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Input Type

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95nC

Td (on/off) @ 25°C

18ns/90ns

Test Condition

400V, 30A, 3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

RGT50NS65DGC9

Rohm Semiconductor

Manufacturer

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Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

48A

Current - Collector Pulsed (Icm)

75A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 25A

Power - Max

194W

Switching Energy

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Input Type

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Gate Charge

49nC

Td (on/off) @ 25°C

27ns/88ns

Test Condition

400V, 25A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Supplier Device Package

TO-262

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