SE12DBHM3/I
For Reference Only
| Part Number | SE12DBHM3/I |
| PNEDA Part # | SE12DBHM3-I |
| Description | DIODE GEN PURP 100V 3.2A TO263AC |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 7,830 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 28 - Dec 3 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SE12DBHM3/I Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | SE12DBHM3/I |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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SE12DBHM3/I Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | Automotive, AEC-Q101, eSMP® |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) | 3.2A |
| Voltage - Forward (Vf) (Max) @ If | 1.15V @ 12A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 3µs |
| Current - Reverse Leakage @ Vr | 20µA @ 100V |
| Capacitance @ Vr, F | 90pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab) Variant |
| Supplier Device Package | TO-263AC (SMPD) |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Manufacturer ON Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 30A Voltage - Forward (Vf) (Max) @ If 1.15V @ 30A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 50ns Current - Reverse Leakage @ Vr 100µA @ 200V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Full Pack Supplier Device Package TO-220F-2L Operating Temperature - Junction -65°C ~ 150°C |
Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 80V Current - Average Rectified (Io) 100mA Voltage - Forward (Vf) (Max) @ If 1.2V @ 100mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) 4ns Current - Reverse Leakage @ Vr 500nA @ 80V Capacitance @ Vr, F 3pF @ 0V, 1MHz Mounting Type Surface Mount Package / Case SC-79, SOD-523 Supplier Device Package ESC Operating Temperature - Junction 125°C (Max) |
