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SBLB10L25HE3_A/P

SBLB10L25HE3_A/P

For Reference Only

Part Number SBLB10L25HE3_A/P
PNEDA Part # SBLB10L25HE3_A-P
Description DIODE SCHOTTKY 25V 10A TO263AB
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 5,076
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SBLB10L25HE3_A/P Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberSBLB10L25HE3_A/P
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
SBLB10L25HE3_A/P, SBLB10L25HE3_A/P Datasheet (Total Pages: 5, Size: 142.28 KB)
PDFSBL10L25HE3/45 Datasheet Cover
SBL10L25HE3/45 Datasheet Page 2 SBL10L25HE3/45 Datasheet Page 3 SBL10L25HE3/45 Datasheet Page 4 SBL10L25HE3/45 Datasheet Page 5

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SBLB10L25HE3_A/P Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesAutomotive, AEC-Q101
Diode TypeSchottky
Voltage - DC Reverse (Vr) (Max)25V
Current - Average Rectified (Io)10A
Voltage - Forward (Vf) (Max) @ If460mV @ 10A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr800µA @ 25V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB
Operating Temperature - Junction-65°C ~ 150°C

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Current - Average Rectified (Io)

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Voltage - Forward (Vf) (Max) @ If

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Speed

Fast Recovery =< 500ns, > 200mA (Io)

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Capacitance @ Vr, F

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Capacitance @ Vr, F

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Package / Case

DO-205AB, DO-9, Stud

Supplier Device Package

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Operating Temperature - Junction

-65°C ~ 190°C

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