S70GL02GP11FAIR10
For Reference Only
| Part Number | S70GL02GP11FAIR10 |
| PNEDA Part # | S70GL02GP11FAIR10 |
| Description | IC FLASH 2G PARALLEL 64FBGA |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 7,884 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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S70GL02GP11FAIR10 Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | S70GL02GP11FAIR10 |
| Category | Semiconductors › Memory ICs › Memory |
| Datasheet |
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S70GL02GP11FAIR10 Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | GL-P |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 2Gb (256M x 8, 128M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | - |
| Access Time | 110ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 64-LBGA |
| Supplier Device Package | 64-FBGA (11x13) |
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Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile Memory Size 64Mb (2M x 32) Memory Interface Parallel Clock Frequency 166MHz Write Cycle Time - Word, Page - Access Time 5.5ns Voltage - Supply 1.7V ~ 1.95V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 90-TFBGA Supplier Device Package 90-TFBGA (8x13) |
Manufacturer Microchip Technology Series - Memory Type Non-Volatile Memory Format EEPROM Technology EEPROM Memory Size 1Mb (128K x 8) Memory Interface I²C Clock Frequency 1MHz Write Cycle Time - Word, Page 5ms Access Time 550ns Voltage - Supply 1.7V ~ 5.5V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 8-UFBGA, WLCSP Supplier Device Package 8-WLCSP |
Manufacturer IDT, Integrated Device Technology Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR (ZBT) Memory Size 18Mb (512K x 36) Memory Interface Parallel Clock Frequency 133MHz Write Cycle Time - Word, Page - Access Time 4.2ns Voltage - Supply 2.375V ~ 2.625V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x14) |
