S29XS256RABBHW000
For Reference Only
| Part Number | S29XS256RABBHW000 |
| PNEDA Part # | S29XS256RABBHW000 |
| Description | IC NOR |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 5,022 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 25 - Nov 30 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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S29XS256RABBHW000 Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | S29XS256RABBHW000 |
| Category | Semiconductors › Memory ICs › Memory |
Payment Method
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- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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S29XS256RABBHW000 Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | * |
| Memory Type | - |
| Memory Format | - |
| Technology | - |
| Memory Size | - |
| Memory Interface | - |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | - |
| Access Time | - |
| Voltage - Supply | - |
| Operating Temperature | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
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Manufacturer Series - Memory Type Non-Volatile Memory Format NVSRAM Technology NVSRAM (Non-Volatile SRAM) Memory Size 64Kb (8K x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 200ns Access Time 200ns Voltage - Supply 4.75V ~ 5.5V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Through Hole Package / Case 28-DIP Module (0.61", 15.49mm) Supplier Device Package 28-DIP Module (18.42x37.72) |
Manufacturer Micron Technology Inc. Series - Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR3 Memory Size 1Gb (64M x 16) Memory Interface Parallel Clock Frequency 667MHz Write Cycle Time - Word, Page - Access Time - Voltage - Supply 1.425V ~ 1.575V Operating Temperature -40°C ~ 95°C (TC) Mounting Type Surface Mount Package / Case 96-TFBGA Supplier Device Package 96-FBGA (8x14) |
