S29VS128RABBHI010
For Reference Only
| Part Number | S29VS128RABBHI010 |
| PNEDA Part # | S29VS128RABBHI010 |
| Description | IC FLASH 128M PARALLEL 44FBGA |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 6,894 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 21 - Mar 26 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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S29VS128RABBHI010 Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | S29VS128RABBHI010 |
| Category | Semiconductors › Memory ICs › Memory |
| Datasheet |
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S29VS128RABBHI010 Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | VS-R |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 128Mb (8M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 108MHz |
| Write Cycle Time - Word, Page | 60ns |
| Access Time | 80ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 44-VFBGA |
| Supplier Device Package | 44-FBGA (7.5x5) |
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Manufacturer Micron Technology Inc. Series - Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 128Mb (32M x 4) Memory Interface SPI Clock Frequency 108MHz Write Cycle Time - Word, Page 8ms, 5ms Access Time - Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 16-SOIC (0.295", 7.50mm Width) Supplier Device Package 16-SO |
Manufacturer Cypress Semiconductor Corp Series - Memory Type Non-Volatile Memory Format NVSRAM Technology NVSRAM (Non-Volatile SRAM) Memory Size 1Mb (128K x 8) Memory Interface SPI Clock Frequency 108MHz Write Cycle Time - Word, Page - Access Time - Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 16-SOIC (0.295", 7.50mm Width) Supplier Device Package 16-SOIC |
Manufacturer IDT, Integrated Device Technology Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 4.5Mb (128K x 36) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page - Access Time 7.5ns Voltage - Supply 3.135V ~ 3.465V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 119-BGA Supplier Device Package 119-PBGA (14x22) |
