S29VS064RABBHW010
For Reference Only
| Part Number | S29VS064RABBHW010 |
| PNEDA Part # | S29VS064RABBHW010 |
| Description | IC FLASH 64M PARALLEL 44FBGA |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,766 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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S29VS064RABBHW010 Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | S29VS064RABBHW010 |
| Category | Semiconductors › Memory ICs › Memory |
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S29VS064RABBHW010 Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | VS-R |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 64Mb (4M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 108MHz |
| Write Cycle Time - Word, Page | 60ns |
| Access Time | 80ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -25°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 44-VFBGA |
| Supplier Device Package | 44-FBGA (7.5x5) |
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Manufacturer IDT, Integrated Device Technology Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR (ZBT) Memory Size 4.5Mb (256K x 18) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page - Access Time 8ns Voltage - Supply 3.135V ~ 3.465V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x14) |
Manufacturer Micron Technology Inc. Series StrataFlash™ Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 256Mb (32M x 8, 16M x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 95ns Access Time 95ns Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 64-TBGA Supplier Device Package 64-EasyBGA (10x13) |
Manufacturer Micron Technology Inc. Series - Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR Memory Size 512Mb (32M x 16) Memory Interface Parallel Clock Frequency 166MHz Write Cycle Time - Word, Page 15ns Access Time 5.0ns Voltage - Supply 1.7V ~ 1.95V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 60-VFBGA Supplier Device Package 60-VFBGA (8x9) |
