S29PL127J65BAW000
For Reference Only
| Part Number | S29PL127J65BAW000 |
| PNEDA Part # | S29PL127J65BAW000 |
| Description | IC FLASH 128M PARALLEL |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 6,084 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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S29PL127J65BAW000 Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | S29PL127J65BAW000 |
| Category | Semiconductors › Memory ICs › Memory |
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S29PL127J65BAW000 Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | PL-J |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 128Mb (8M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 65ns |
| Access Time | 65ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -25°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 80-VFBGA |
| Supplier Device Package | 80-FBGA (8x11) |
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Manufacturer Micron Technology Inc. Series - Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 4Mb (512K x 8, 256K x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 90ns Access Time 90ns Voltage - Supply 4.5V ~ 5.5V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 44-SOIC (0.496", 12.60mm Width) Supplier Device Package 44-SO |
Manufacturer Micron Technology Inc. Series - Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 64Mb (8M x 8, 4M x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 70ns Access Time 70ns Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 64-LBGA Supplier Device Package 64-FBGA (11x13) |
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Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 18Mb (256K x 72) Memory Interface Parallel Clock Frequency 133MHz Write Cycle Time - Word, Page - Access Time 6.5ns Voltage - Supply 2.375V ~ 2.625V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 209-BGA Supplier Device Package 209-LFBGA (14x22) |
