S29PL127J60BAE000
For Reference Only
| Part Number | S29PL127J60BAE000 |
| PNEDA Part # | S29PL127J60BAE000 |
| Description | IC FLASH 128M PARALLEL |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 5,040 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 21 - Mar 26 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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S29PL127J60BAE000 Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | S29PL127J60BAE000 |
| Category | Semiconductors › Memory ICs › Memory |
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S29PL127J60BAE000 Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | PL-J |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 128Mb (8M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 60ns |
| Access Time | 60ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -25°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 80-VFBGA |
| Supplier Device Package | 80-FBGA (8x11) |
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Manufacturer Cypress Semiconductor Corp Series GL-S Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 1Gb (64M x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 60ns Access Time 100ns Voltage - Supply 2.7V ~ 3.6V Operating Temperature 0°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 64-LBGA Supplier Device Package 64-FBGA (13x11) |
Manufacturer IDT, Integrated Device Technology Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR (ZBT) Memory Size 4.5Mb (128K x 36) Memory Interface Parallel Clock Frequency 133MHz Write Cycle Time - Word, Page - Access Time 4.2ns Voltage - Supply 3.135V ~ 3.465V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x14) |
Manufacturer Cypress Semiconductor Corp Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 16Mb (1M x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 10ns Access Time 10ns Voltage - Supply 2.2V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package 48-TSOP I |
Manufacturer Micron Technology Inc. Series - Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 256Mb (32M x 8, 16M x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 100ns Access Time 100ns Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Micron Technology Inc. Series - Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND Memory Size 128Gb (16G x 8) Memory Interface Parallel Clock Frequency 83MHz Write Cycle Time - Word, Page - Access Time - Voltage - Supply 2.7V ~ 3.6V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 152-VBGA Supplier Device Package 152-VBGA (14x18) |
