S29GL256S10DHIV23
For Reference Only
Part Number | S29GL256S10DHIV23 |
PNEDA Part # | S29GL256S10DHIV23 |
Description | IC FLASH 256M PARALLEL 64BGA |
Manufacturer | Cypress Semiconductor |
Unit Price | Request a Quote |
In Stock | 6,426 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 30 - Dec 5 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
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S29GL256S10DHIV23 Resources
Brand | Cypress Semiconductor |
ECAD Module | |
Mfr. Part Number | S29GL256S10DHIV23 |
Category | Semiconductors › Memory ICs › Memory |
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S29GL256S10DHIV23 Specifications
Manufacturer | Cypress Semiconductor Corp |
Series | GL-S |
Memory Type | Non-Volatile |
Memory Format | FLASH |
Technology | FLASH - NOR |
Memory Size | 256Mb (16M x 16) |
Memory Interface | Parallel |
Clock Frequency | - |
Write Cycle Time - Word, Page | 60ns |
Access Time | 100ns |
Voltage - Supply | 1.65V ~ 3.6V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 64-LBGA |
Supplier Device Package | 64-FBGA (9x9) |
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Micron Technology Inc. Manufacturer Micron Technology Inc. Series - Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 128Mb (32M x 4) Memory Interface SPI Clock Frequency 108MHz Write Cycle Time - Word, Page 8ms, 5ms Access Time - Voltage - Supply 1.7V ~ 2V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 24-TBGA Supplier Device Package 24-T-PBGA (6x8) |
Renesas Electronics America Manufacturer Renesas Electronics America Series - Memory Type Volatile Memory Format SRAM Technology SRAM Memory Size 4Mb (256K x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 45ns Access Time 45ns Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 48-TFBGA Supplier Device Package 48-FBGA (7.5x8.5) |